Surface characterization of 3C-SiC exposed to XeF2

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Watanabe, Morimichi ^a   Mori, Yukimasa ^a   Sakai, Hiroaki ^a   Iida, Takashi ^b   Koide, Shunsuke ^b   Maeta, Eri ^b   Sawabe, Kyoichi ^b   Shobatake, Kosuke ^b  

^a NGK INSULATORS LTD   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

AES; Quadrupole mass spectrometer; SAM; SEM; Silicon carbide; Xenon difluoride; XPS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CYCLOTRON RESONANCE; MASS SPECTROMETERS; MOLECULAR DYNAMICS; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SURFACE CHEMISTRY; THERMAL CONDUCTIVITY; THERMOCOUPLES; X RAY PHOTOELECTRON SPECTROSCOPY; XENON;

AES; QUADRUPOLE MASS SPECTROMETERS; SCANNING AUGER MICROSCOPY (SAM); XENON DIFLUORIDE;

SILICON CARBIDE;

EID: 2442533116     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l346     Document Type: Article

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