Reactive ion etching of 6H-SiC in an ECR plasma of CF4-O2 mixtures using both Ni and Al masks

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 374-378

  Syrkin, Alexander L ^a   Bluet, Jean Marie ^a   Camassel, Jean ^a   Bonnot, Roger ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIV MONTPELLIER   (France)

Author keywords

Aluminum; Electron cyclotron resonance; Nickel; Reactive ion etching; Silicon carbide

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; MASKS; MORPHOLOGY; NICKEL; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SURFACE STRUCTURE;

CARBON TETRAFLUORIDE; LELY METHOD;

SILICON CARBIDE;

EID: 0042376975     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02009-0     Document Type: Article

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