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Journal of the Korean Physical Society

Volumn 44, Issue 4, 2004, Pages 915-919

Characteristics of ZrO 2 films deposited by using the atomic layer deposition method

(5) Lee, Janghee a Koo, Jaehyoung a Sim, Hyun Sang a Jeon, Hyeongtag a Won, Youngdo a

a Hanyang University (South Korea)

Author keywords

ALD; EOT; Gate oxide; High dielectric constant; ZrO 2

Indexed keywords

EID: 2442526263 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (27)

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