Bonding and epitaxial relationships at high-K oxide:Si interfaces

Materials Research Society Symposium - Proceedings

Volumn 786, Issue , 2003, Pages 23-28

  Robertson, J ^a   Peacock, P W ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; MATHEMATICAL MODELS; SILICA; STRONTIUM COMPOUNDS;

DANGLING BONDS (DB); EPITAXIAL INTERFACE MODELS; GATE DIELECTRICS; INTERFACE POTENTIAL;

SEMICONDUCTING SILICON;

EID: 2442497424     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-786-e5.5     Document Type: Conference Paper

References (13)

1. G Wilk, R M Wallace, J M Anthony, J App Phys 89 5243 (2001)
2. J Robertson, J Vac Sci Technol B 18 1785 (2000)
3. L Pauling, 'Nature of Chemical Bond', (Cornell University Press, 1939)
4. P W Peacock, J Robertson, Phys Rev Letts (2004)
5. R A McKee, F J Walker, M F Chisholm, Phys Rev Lett 81 3014 (1998)
6. P W Peacock, J Robertson, App Phys Lett (Dec 29, 2003)
7. C J Forst, C Ashman, K Schwarz, P E Blochl, Nature (2003)
8. X Zhang, A A Demkov, H Li, X Hu, Y Wei, J Kulik, Phys Rev B 68 125323 (2003)
9. P W Peacock, J Robertson, Mat Res Soc Symp Proc 747 99 (2002)
10. D Cherns, C J D Hetherington, C J Humphreys, Philos Mag A 49 165 (1984)
11. S J Wang, C K Ong, App Phys Lett 80 2541 (2002)
12. V Fiorentini, G Gulleri, Phys Rev Lett 89 266101 (2002)
13. P W Peacock, J Robertson, J App Phys 92 4712 (2002)