An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 495-501

  Lee, Sang Yun ^a   Cetiner, Bedri Artug ^a   Torpi, Hamid ^b   Cai, S J ^a   Li, Jiang ^a   Alt, K ^a   Chen, Y L ^a   Wen, Cheng ^a   Wang, Kang L ^a   Itoh, Tatsuo ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b YILDIZ TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Device modeling; Gallium nitride (GaN); HEMT; Neural network technique; Power amplifier

Indexed keywords

COMPUTER SIMULATION; GAIN MEASUREMENT; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; NEURAL NETWORKS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

FREQUENCY BANDWIDTH; SINGLE STAGE AMPLIFIER;

POWER AMPLIFIERS;

EID: 0035279247     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906442     Document Type: Article

References (10)

1. Signal-noise neural network model for active microwave devices
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7. Artificial neural networks for fast and accurate EM-CAD of microwave circuits
8. EM-ANN models for microstrip vias and interconnects in dataset circuits
9. High performance AlGaN/GaN HEMT with improved ohmic contacts