High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

Electronics Letters

Volumn 37, Issue 19, 2001, Pages 1199-1200

  Chung, Y ^a   Cai, S ^a   Lee, W ^a   Lin, Y ^a   Wen, C P ^a   Wang, K L ^a   Itoh, T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND NETWORKS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; TOPOLOGY;

FEEDBACK LOOP INDUCTANCES;

FEEDBACK AMPLIFIERS;

EID: 0035855799     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010787     Document Type: Article

References (4)

1. GaN microwave electronics
2. 1 and 1.7 W/mm output power at 10 GHz
3. High performance AlGaN/GaN HEMT with improved ohmic contacts
4. The matched feedback amplifier: Ultrawide-band microwave amplification with GaAs MESFETs