Raman study of Si-Ge intermixing in Ge quantum rings and dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 28, Issue 4, 2005, Pages 531-536

  Mashanov, V I ^a,c   Cheng, H H ^a   Chia, C T ^b   Chang, Y H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Germanium; Quantum dots; Quantum rings; Raman scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; GERMANIUM; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; RAMAN SCATTERING; STRAIN CONTROL; THERMAL EFFECTS;

OPTICAL SPECTROSCOPY; QUANTUM RINGS; RAMAN SIGNALS; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 24144475525     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.05.060     Document Type: Article

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