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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 3-4, 2003, Pages 602-608

Shape transformation of Ge quantum dots due to Si overgrowth

(4) Kirfel, O a Muller E a Grutzmacher D a Kern, K b,c

a PAUL SCHERRER INSTITUTE (Switzerland)

b EPFL (Switzerland)

c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

Quantum dots; Scanning tunnelling microscopy; Transmission electron microscopy

Indexed keywords

COMPOSITION; DEPOSITION; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

SHAPE TRANSFORMATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037373205 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(02)00638-0 Document Type: Conference Paper

Times cited : (10)

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