Transport properties of compensated μc-Si:H

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 801-806

  Wyrsch, N ^a   Goerlitzer, M ^a   Beck, N ^a   Meier, J ^a   Shah, A ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON TRANSPORT PROPERTIES; PHOTOVOLTAIC CELLS; THERMAL EFFECTS;

DRIFT MOBILITY; HOLE TRANSPORT; MICROCRYSTALLINE SILICON; TIME OF FLIGHT;

SEMICONDUCTING SILICON;

EID: 0030401079     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-801     Document Type: Conference Paper

References (8)