![]() |
Volumn 762, Issue , 2003, Pages 345-350
|
Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon
a
b
BP Solar Inc
*
(United States)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ACTIVATION ENERGY;
BAND STRUCTURE;
CRYSTALLINE MATERIALS;
DEPOSITION;
ELECTRIC FIELD EFFECTS;
ELECTRON MOBILITY;
ELECTRON TRAPS;
ETCHING;
HOLE MOBILITY;
HYDROGENATION;
PHOTOCURRENTS;
SCHOTTKY BARRIER DIODES;
DRIFT MOBILITIES;
VALENCE BANDS;
AMORPHOUS SILICON;
|
EID: 1642561592
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-762-a7.1 Document Type: Conference Paper |
Times cited : (14)
|
References (7)
|