Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

Journal of Physics D: Applied Physics

Volumn 38, Issue 8, 2005, Pages 1178-1181

  Jones, B J ^a   Barklie, R C ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CONCENTRATION (PROCESS); CRYOGENICS; RAPID THERMAL ANNEALING; THIN FILMS;

ALUMINUM OXIDE FILMS; ATOMIC LAYER DEPOSITION; DEFECT DENSITY; GAS ANNEALING;

PARAMAGNETIC RESONANCE;

EID: 24144471068     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/8/013     Document Type: Article

References (17)

1. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
2. Gusev E P, Copel M, Cartier E, Baumvol I J R, Krug C and Gribelyuk M A 2000 Appl. Phys. Lett. 76 176
3. Buchanan D A 2004 13th Workshop on Dielectrics in Microelectronics (Kinsale, Co. Cork, Ireland, June 2004)
4. Stesmans A and Afanas'ev V V 1998 J. Appl. Phys. 83 249
5. Reed M L and Plummer J D 1988 J. Appl. Phys. 63 5776
6. Stesmans A 1996 Appl. Phys. Lett. 68 2076
7. Stesmans A and Afanas'ev V V 2001 J. Phys.: Condens. Matter. 13 L673
8. Stesmans A and Afanas'ev V V 2002 Appl. Phys. Lett. 80 1957
9. Cantin J L and von Bardeleben H J 2002 J. Non-Cryst. Solids 303 175
10. Tsai W et al 2003 Microelectron. Eng. 65 259
11. Brewer R T, Ho M-T, Zhang K Z, Goncharova L V, Starodub D G, Gustafsson T, Chabal Y J and Moumen N 2004 Appl. Phys. Lett. 85 3830
12. Copel M, Gribelyuk M and Gusev E 2000 Appl. Phys. Lett. 76 436
13. Barklie R C, Collins M and Suva S R P 2000 Phys. Rev. B 61 3546
14. Walters G K and Estle T L 1961 J. Appl. Phys. 32 1854
15. Pierreux D and Stesmans A 2002 Phys. Rev. B 66 165320
16. Stesmans A 2002 J. Appl. Phys. 92 1317
17. Brower K L 1988 Phys. Rev. B 38 9657