Excess hot-carrier currents in SOI MOSFETs and its implications

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 93-97

  Su, Pin ^a   Goto, Ken Ichi ^b   Sugii, Toshihiro ^b   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CURRENTS; ELECTRIC HEATING; EXTRAPOLATION; IMPACT IONIZATION; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY;

HOT-CARRIER CURRENTS;

HOT CARRIERS;

EID: 0036085793     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996615     Document Type: Article

References (14)

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5. Temperature dependence of hot carrier effects in short-channel Si-MOSFET's
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7. Measurement and modeling of self-heating in SOI NMOSFET's
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9. Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS
10. Self-heating characterization for SOI MOSFET based on AC output conductance
11. An AC conductance technique for measuring self-heating in SOI MOSFET's
12. Impact of e-e scattering to the hot carrier degradation of deep submicron NMOSFET's
13. A one-dimensional solution of the Boltzmann transport equation including electron-electron interactions