Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

Journal De Physique. IV : JP

Volumn 12, Issue 3, 2002, Pages

  Cretu, B ^a   Balestra, F ^a   Ghibaudo, G ^a   Guegan G ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; HOT CARRIERS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CARRIER VELOCITY; DRAIN INDUCED BARRIER LOWERING; DRAIN VOLTAGE; DRIVING CURRENTS; HOT CARRIER DEGRADATION; SHORT CHANNEL EFFECTS; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0036564332     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp420020036     Document Type: Conference Paper

References (14)

1. Device and circuit cryogenic operation for low temperature electronics