Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers

Applied Physics Letters

Volumn 87, Issue 1, 2005, Pages

  Yoon, Tae Sik ^a   Liu, Jian ^a   Noori, Atif M ^a   Goorsky, Mark S ^a   Xie, Ya Hong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION DISTRIBUTION; SIGE;

COMPOSITION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SURFACE ROUGHNESS; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY;

SILICON COMPOUNDS;

EID: 24144460620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1988986     Document Type: Article

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