Electrodes and barriers for dram and feram: Processing, integration, and fundamentals

Materials Research Society Symposium - Proceedings

Volumn 655, Issue , 2001, Pages

  Saenger, K L ^a   Andricacos, P C ^a   Athavale, S D ^b   Baniecki, J D ^b   Cabral Jr , C ^a   Costrini, G ^b   Kwietniak, K T ^a   Laibowitz, R B ^a   Lian, J J ^c   Limb, Y ^c   Neumayer, D A ^a   Wise, M L ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24144445177     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (22)

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