Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Maximenko, Serguei I ^a   Pirouz, Pirouz ^b   Sudarshan, Tangali S ^a  

^a University of South Carolina   (United States)

^b Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-BEAM-INDUCED CURRENT (EBIC); HIGH CURRENT STRESS; P-I-N DIODES; RECOMBINATION ACTIVITY;

ELECTRON BEAMS; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; STACKING FAULTS;

SEMICONDUCTOR DIODES;

EID: 24144442861     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999297     Document Type: Article

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