Electron beam induced current investigation of high-voltage 4H silicon carbide diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Österman, John ^a   Hallén, Anders ^a   Jargelius, Mikael ^a   Zimmermann, Uwe ^a   Galeckas, Augustinas ^a   Breitholtz, Bo ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE COUPLED DEVICES; CRYSTAL DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; LIGHT EMISSION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

ELECTRON BEAM INDUCED CURRENTS (EBIC);

SEMICONDUCTOR DIODES;

EID: 12944315081     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

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