Influence of annealing ambient on oxygen out-diffusion in Czochralski silicon

Journal of Applied Physics

Volumn 87, Issue 9, 2000, Pages 4194-4197

  Yamazaki, Hideyuki ^a   Matsushita, Hiroshi ^a   Sugamoto, Junji ^a   Tsuchiya, Norihiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33748430098     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.373051     Document Type: Article

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