Hydrogen diffusion characterized by hydrogen enhanced thermal donor formation in P-type Czochralski silicon at temperatures between 350 and 450°C

Proceedings - Electrochemical Society

Volumn 5, Issue , 2004, Pages 419-428

  Huang, Y L ^a   Ma, Y ^a   Job, R ^a   Fahrner, W R ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN GASES; HYDROGEN; MOLECULES; PASSIVATION; SEMICONDUCTOR JUNCTIONS; STATISTICAL METHODS; TEMPERATURE DISTRIBUTION;

DONORS; P-N JUNCTION; SPREADING RESISTANCE PROBE (SRP); THERMAL DONORS (TD);

SILICON WAFERS;

EID: 17144428571     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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