Tight-binding studies of the electronic band structure of GaAlN and GaInN alloys

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 5, 2005, Pages 1029-1033

  Hernandez Cocoletzi H ^a   Contreras Solorio, D A ^a,b   Arriaga, J ^a  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE ZACATECAS   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL STRUCTURE; GALLIUM ALLOYS; HAMILTONIANS; SEMICONDUCTING GALLIUM ARSENIDE;

BINARY COMPOUNDS; ELECTRONIC BAND STRUCTURE; TIGHT-BINDING (TB); VIRTUAL CRYSTAL APPROXIMATION;

BAND STRUCTURE;

EID: 23944495063     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2930-5     Document Type: Article

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