Photoelectrical properties of AlGaN epitaxial layers grown by HVPE

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 465-468

  Onushkin, G A ^a,b   Nikolaev, A E ^a,b   Fomin, A V ^a,b,c   Ledyaev, O Yu ^a   Cherenkov, A E ^a   Kalinina, E V ^a,b   Nikitina, I P ^a,b   Kovalenkov, O V ^c   Dmitriev, V A ^c  

^a Crystal Growth Research Center   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; ALUMINUM OXIDE; CAPACITANCE; ENERGY GAP; III-V SEMICONDUCTORS; NITRIDES; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR ALLOYS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

AL CONTENT; CAPACITANCE VOLTAGE; HYDRIDE VAPOR PHASE EPITAXY; MOLE FRACTION; PEAK VALUES; PHOTO-ELECTRICAL PROPERTIES; SCHOTTKY BARRIERS; SPECTRAL RESPONSE;

EPITAXIAL GROWTH;

EID: 33845223646     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390089     Document Type: Conference Paper

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