SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 363, Issue 1-3, 1996, Pages 337-341

Electron-stimulated desorption study of an atomic hydrogen-adsorbed FZ-Si(100) surface

(1) Ueda, Kazuyuki a

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

Electron stimulated desorption (ESD); Low index single crystal surfaces; Silicon

Indexed keywords

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; HYDROGEN; OXYGEN; PROTONS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACES;

ELECTRON STIMULATED DESORPTION; FLOATING ZONE METHOD; KINETIC ENERGY DISTRIBUTION; LANGMUIR HYDROGEN; THRESHOLD ELECTRON ENERGY; TIME OF FLIGHT METHOD;

DESORPTION;

EID: 0030205840 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00158-6 Document Type: Article

Times cited : (3)

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