Potential sputtering of proton from hydrogen-terminated Si(100) surfaces induced with slow highly charged ions

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3561-3563

  Kuroki, K ^a   Okabayashi, N ^a   Torii, H ^a   Komaki, K ^a   Yamazaki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOND-BREAKING; CLASSICAL OVER BARRIERS; DOUBLE ELECTRON CAPTURE; ENERGY DISTRIBUTIONS; KEY PARAMETERS; POTENTIAL SPUTTERING; SI(1 0 0); SI(100) SURFACE; SLOW HIGHLY CHARGED IONS; SPUTTERING YIELDS; SURFACE CONDITIONS;

HYDROGEN; PROTONS; SPUTTERING; SURFACE ROUGHNESS;

SILICON;

EID: 79956051383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1520335     Document Type: Article

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