Horizontal current bipolar transistor (HCBT) process variations for future RF BiCMOS applications

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1392-1398

  Suligoj, Tomislav ^a,b   Sin, Johnny K O ^a   Wang, Kang L ^c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF ZAGREB   (Croatia)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

BiCMOS integrated circuits; Bipolar transistors; Chemical vapor deposition (CVD); FinFET; Horizontal current bipolar transistor (HCBT); Microwave measurements; Semi conductor device ion implantation; Silicon on insulator (SOI) technology

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; MICROWAVE MEASUREMENT; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

BICMOS INTEGRATED CIRCUITS; FINFET; HORIZONTAL CURRENT BIPOLAR TRANSISTOR (HCBT); SEMICONDUCTOR DEVICE ION IMPLANTATION;

CMOS INTEGRATED CIRCUITS;

EID: 23944443585     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850636     Document Type: Article

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