A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Solid-State Electronics

Volumn 48, Issue 10-11, 2004, Pages 2047-2050

  Suligoj, Tomislav ^a,b   Liu, Haitao ^b   Sin, Johnny K O ^b   Tsui, Kenneth ^b   Chu, Rongming ^b   Chen, Kevin J ^b   Biljanovic, Petar ^a   Wang, Kang L ^c  

^a UNIVERSITY OF ZAGREB   (Croatia)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

BiCMOS integrated circuits; Bipolar transistors; CVD; Microwave measurements; Semiconductor device ion implantation; Silicon on insulator technology

Indexed keywords

ANNEALING; BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ETCHING; FREQUENCIES; ION IMPLANTATION; MICROWAVE MEASUREMENT; PASSIVATION; PHOTORESISTS; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY;

BIC METAL OXIDE SEMICONDUCTORS(MOS) INTEGRATED CIRCUITS; CUT OFF FREQUENCY; LATERAL BIPOLAR TRANSISTORS (LBT); SEMICONDUCTOR DEVICE ION IMPLANTATION;

MOSFET DEVICES;

EID: 3142764111     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.075     Document Type: Article

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