InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 124-129

  Pinsukanjana, Paul R ^a   Marquis, Jeremy M ^a   Hubbard, Jared ^a   Trivedi, Mehul A ^a   Dickey, Roger F ^a   Tsai, Jerry M S ^a   Kuo, Sam P ^a   Kao, Philip S ^a   Kao, Yung Chung ^a  

^a Intelligent Epitaxy Technology Inc   (United States)

Author keywords

A3. In situ sensors; A3. Molecular beam epitaxy; A3. Real time growth monitor; B2. Semiconducting gallium arsenide; B2. Semiconducting indium phosphide; B3. Heterojunction semiconductor devices

Indexed keywords

ATOMIC BEAMS; COMPOSITION; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT ABSORPTION; OPTICAL DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION ANALYSIS;

OPTICAL-BASED FLUX MONITORS (OFM);

MOLECULAR BEAM EPITAXY;

EID: 0037382106     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02293-5     Document Type: Conference Paper

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