Demonstration of GSMBE grown InP/GaAs0.51Sb0.49/InP DHBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 239-242

  Matine, N ^a   Dvorak, M W ^a   Lam, S ^a   Bolognesi, C R ^a   Houng, Y M ^a   Moll, N ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033700073     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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