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Volumn 457-460, Issue I, 2004, Pages 297-300

Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

(12) Morales, F M a Zgheib, Ch b,c Molina, S I a Araujo D a Garcia R a Fernandez C a Sanz Hervas A d Masri, P c Weih, P b Stauden, Th b Ambacher, O b Pezoldt, J b

a UNIVERSITY OF CÁDIZ (Spain)

b Institut fur Mikro und Nanotechnologien (Germany)

c UNIVERSITÉ MONTPELLIER 2 (France)

d UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

FTIR; Germanium; SiC Si heteroepitaxy; SIMS; TEM; XRD

Indexed keywords

CARBONIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FULL-WIDTH-AT-HALF-MAXIMUM (FWHM); LATTICE RELAXATION; SELECTED-AREA ELECTRON DIFFRACTION (SAED); SIC/SI HETEROEPITAXY;

SILICON CARBIDE;

EID: 8744242099 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.297 Document Type: Conference Paper

Times cited : (3)

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