-
1
-
-
0036810230
-
(Beam characterization) Good fundamentals
-
October
-
S.J. Matthews, "(Beam characterization) Good fundamentals", Laser Focus World 82-86, (October 2002).
-
(2002)
Laser Focus World
, vol.82-86
-
-
Matthews, S.J.1
-
2
-
-
0001718591
-
Spatial mode structure of broad-area semiconductor quantum well lasers
-
C.J. Chang-Hasnain et al., "Spatial mode structure of broad-area semiconductor quantum well lasers", APL 54 (3), 205-207 (1989).
-
(1989)
APL
, vol.54
, Issue.3
, pp. 205-207
-
-
Chang-Hasnain, C.J.1
-
3
-
-
0018035634
-
Beamwidth approximations for fundamental mode in symmetric double-heterojunction lasers
-
D. Botez and M. Ettenberg, "Beamwidth approximations for fundamental mode in symmetric double-heterojunction lasers", IEEE JQE QE-14 (11), 827-830 (1978).
-
(1978)
IEEE JQE
, vol.QE-14
, Issue.11
, pp. 827-830
-
-
Botez, D.1
Ettenberg, M.2
-
4
-
-
1842585751
-
Far-field emission characteristics of high-power laser diodes
-
A. Kozlowska and A. Malag, "Far-field emission characteristics of high-power laser diodes", Proc. SPIE 5120, 178-183 (2003).
-
(2003)
Proc. SPIE
, vol.5120
, pp. 178-183
-
-
Kozlowska, A.1
Malag, A.2
-
5
-
-
0002072628
-
High power, Al-free diode lasers
-
D. Botez, "High power, Al-free diode lasers", Compound Semiconductors 5 (6), (1999).
-
Compound Semiconductors
, vol.5
, Issue.6
, pp. 1999
-
-
Botez, D.1
-
6
-
-
0030270840
-
High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size
-
M.A. Emanuel et al., "High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size", IEEE PTL 8 (10), 1291-1293 (1996).
-
(1996)
IEEE PTL
, vol.8
, Issue.10
, pp. 1291-1293
-
-
Emanuel, M.A.1
-
7
-
-
0033895092
-
Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation
-
A. Knauer et al., "Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation", J. Electron. Mat. 29 (1), 53-56 (2000).
-
(2000)
J. Electron. Mat.
, vol.29
, Issue.1
, pp. 53-56
-
-
Knauer, A.1
-
8
-
-
0035263985
-
High power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
-
J. Sebastian et al., "High power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence", IEEE JSTQE 7 (2), 334-339 (2001).
-
(2001)
IEEE JSTQE
, vol.7
, Issue.2
, pp. 334-339
-
-
Sebastian, J.1
-
9
-
-
9144224424
-
16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure
-
N.A Pikhtin et al., "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure", Electron. Lett. 40 (22), 1413-1414 (2004).
-
(2004)
Electron. Lett.
, vol.40
, Issue.22
, pp. 1413-1414
-
-
Pikhtin, N.A.1
-
10
-
-
4544258612
-
Improvement of differential quantum efficiency and power output by waveguide asymmetry in separate-confinement-structure diode lasers
-
B.S. Ryvkin and E.A. Avrutin, "Improvement of differential quantum efficiency and power output by waveguide asymmetry in separate-confinement- structure diode lasers", IEE Proc.-Optoelectron. 151 (4), 232-236 (2004).
-
(2004)
IEE Proc.-Optoelectron.
, vol.151
, Issue.4
, pp. 232-236
-
-
Ryvkin, B.S.1
Avrutin, E.A.2
-
11
-
-
0031109219
-
Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high power operation
-
M. Buda et al., "Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high power operation", IEEE JST QE 3 (2), 173-179 (1997).
-
(1997)
IEEE JST QE
, vol.3
, Issue.2
, pp. 173-179
-
-
Buda, M.1
-
12
-
-
0032662502
-
High power CW output from low confinement asymmetric structure diode laser
-
G. Iordache et al., "High power CW output from low confinement asymmetric structure diode laser", Electron. Lett. 35 (2), 148-149 (1999).
-
(1999)
Electron. Lett.
, vol.35
, Issue.2
, pp. 148-149
-
-
Iordache, G.1
-
13
-
-
1942500983
-
High performance 980-nm ridge waveguide laser with a nearly circular beam
-
G. Yang et al., "High performance 980-nm ridge waveguide laser with a nearly circular beam", IEEE PTL 16 (4), 981-983 (2004).
-
(2004)
IEEE PTL
, vol.16
, Issue.4
, pp. 981-983
-
-
Yang, G.1
-
14
-
-
0030420974
-
Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
-
G. Lin et al., "Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure", IEEE PTL 8 (12), 1588-1590 (1996).
-
(1996)
IEEE PTL
, vol.8
, Issue.12
, pp. 1588-1590
-
-
Lin, G.1
-
15
-
-
0010355782
-
Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current
-
G.W. Yang, J.Y. Xu, Z.T. Xu, J.M. Zhang, L.H. Hen, and Q.M. Wang, "Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current", JAP 3 (1), 8-14 (1998).
-
(1998)
JAP
, vol.3
, Issue.1
, pp. 8-14
-
-
Yang, G.W.1
Xu, J.Y.2
Xu, Z.T.3
Zhang, J.M.4
Hen, L.H.5
Wang, Q.M.6
-
16
-
-
0030165617
-
Vertical beam divergence of double-barrier multiquantum well (DBMQW) (AlGa)As heterostructure lasers
-
A. Malag and B. Mroziewicz, "Vertical beam divergence of double-barrier multiquantum well (DBMQW) (AlGa)As heterostructure lasers", Journal of the Lightwave Technology 14 (6), 514-1518 (1996).
-
(1996)
Journal of the Lightwave Technology
, vol.14
, Issue.6
, pp. 514-1518
-
-
Malag, A.1
Mroziewicz, B.2
-
17
-
-
0030677190
-
MOVPE-grown (AlGa)As double-barrier multiquantum well (DBMQW) laser diode with low vertical beam divergence
-
A. Mala̧g and W. Strupiński, "MOVPE-grown (AlGa)As double-barrier multiquantum well (DBMQW) laser diode with low vertical beam divergence", J. Crystal Growth 170, 408-412 (1997).
-
(1997)
J. Crystal Growth
, vol.170
, pp. 408-412
-
-
Mala̧g, A.1
Strupiński, W.2
-
18
-
-
33645403451
-
Effect of Al-content reduction in (AlGa)As cladding layers of MOVPE grown high-power laser diodes
-
Lecce, Italy, June 8-11
-
th EW MOVPE, Lecce, Italy, 235-238 (June 8-11, 2003).
-
(2003)
th EW MOVPE
, pp. 235-238
-
-
Mala̧g, A.1
Kozłowska, A.2
Wesołowski, M.3
-
19
-
-
0036684165
-
High-power 980-nm ridge waveguides laser diodes including an asymmetrically expanded optical field normal to active layer
-
K. Shigihara et al., "High-power 980-nm ridge waveguides laser diodes including an asymmetrically expanded optical field normal to active layer", IEEE JQE 38 (8), 1081-1088 (2002).
-
(2002)
IEEE JQE
, vol.38
, Issue.8
, pp. 1081-1088
-
-
Shigihara, K.1
-
20
-
-
0025471754
-
Single-quantum-well laser with 11.2 degree transverse beam divergence
-
Y.C. Chen, R.G. Waters, and R.J. Dalby, "Single-quantum-well laser with 11.2 degree transverse beam divergence", Electron. Lett. 26, 1348-1350 (1990).
-
(1990)
Electron. Lett.
, vol.26
, pp. 1348-1350
-
-
Chen, Y.C.1
Waters, R.G.2
Dalby, R.J.3
-
21
-
-
7744220294
-
Highly reliable high-power 980-nm pump laser
-
G. Yang et al., "Highly reliable high-power 980-nm pump laser", IEEE PTL 16 (11), 2403-2405 (2004).
-
(2004)
IEEE PTL
, vol.16
, Issue.11
, pp. 2403-2405
-
-
Yang, G.1
-
22
-
-
0032614582
-
Design considerations and analytical approximations for high continuous-wave power, broad waveguide diode lasers
-
D. Botez, "Design considerations and analytical approximations for high continuous-wave power, broad waveguide diode lasers", APL 74, 3102-3104 (1999).
-
(1999)
APL
, vol.74
, pp. 3102-3104
-
-
Botez, D.1
|