High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer

IEEE Journal of Quantum Electronics

Volumn 38, Issue 8, 2002, Pages 1081-1088

  Shigihara, Kimio ^a,b   Kawasaki, Kazushige ^b   Yoshida, Yasuaki ^b   Yamamura, ShiN'Ichi ^b   Yagi, Tetsuya ^b   Omura, Etsuji ^b  

^a IEEE   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Erbium; Laser beams; Laser modes; Optical fiber amplifiers; Pumps; Semiconductor lasers; Wavelength division multiplexing

Indexed keywords

WAVEGUIDE LASER DIODES;

ASPECT RATIO; LASER BEAMS; LASER MODES; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; WAVELENGTH DIVISION MULTIPLEXING;

SEMICONDUCTOR LASERS;

EID: 0036684165     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.801031     Document Type: Article

References (8)

1. 40 WDM 2.5 Gbit/s transmission over 12000km using widely gain-flattened low-noise 980 nm-pumped EDFAs
2. 3+-doped fiber amplifiers
3. Comparative study of temperature-dependent multichannel gain and noise figure distortion for 1.48- and 0.98-μm pumped EDFAs
4. Development of 1.02-μm pump laser diodes
5. Single-mode C. W. ridge-waveguide laser emitting at 1.55 μm
6. Facet oxidation of InGaAs/GaAs strained quantum-well lasers
7. Low threshold 0.98 μm aluminum-free strained-quantum-well InGaAs/InGaAsP/InGaP lasers
8. Beam quality of InGaAs ridge lasers at high output power