Far-field emission characteristics of high-power laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5120, Issue , 2003, Pages 178-183

  Kozłowska, Anna ^a   Malag, Andrzej ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Active region; Far field distribution; Laser diode; Near field intensity distribution

Indexed keywords

ACTIVE REGIONS; FAR-FIELD DISTRIBUTION; NEAR-FIELD INTENSITY DISTRIBUTION;

CAMERAS; CHARGE COUPLED DEVICES; DIFFRACTION; HETEROJUNCTIONS; HIGH POWER LASERS; IMAGE ANALYSIS; SENSORS; SOFTWARE ENGINEERING;

SEMICONDUCTOR LASERS;

EID: 1842585751     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. H.C.Casey, Jr., M.B.Panish, "Heterostructure Lasers", Academic Press, New York, 1978.
2. A.Malag, B.Mroziewicz, "Vertical beam divergence of double-barrier multiquantum well (DBMQW) (AlGa)As heterostructure lasers", J. Lightwave. Techn., Vol. 14(6), pp. 1514-1518, 1996.
3. P.A.Kirkby, P.R-Selway, L.D.Westbrook, "Photoelastic waveguides and their effect on stripe-geometry GaAs/Gal-xAlxAs lasers, J.Appl. Phys., Vol. 50(7), pp. 4567-4579, 1979.