Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high-power operation

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 173-179

  Buda, Manuela ^a,b,c   Van De Roer, T G ^a,d,e   Kaufmann, L M F ^a,f,g,h   Iordache, Gh ^b   Cengher, D ^b   Diaconescu, D ^b   Petrescu Prahova, I B ^b   Haverkort, Jos E M ^a,i   Van Der Vleuten, Willem ^a,j   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c UNIVERSITY OF BUCHAREST   (Romania)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

^f RWTH AACHEN UNIVERSITY   (Germany)

^g UNIVERSITY OF DUISBURG ESSEN   (Germany)

^h EUT Interuniv Res Inst Commun T

ⁱ LEIDEN UNIVERSITY   (Netherlands)

^j Philips Redhill   (United Kingdom)

more..

Author keywords

Gallium materials devices; Injection lasers; Optoelectronic devices; Quantum well devices; Semiconductor lasers

Indexed keywords

CHARGE CARRIERS; CONTINUOUS WAVE LASERS; CURRENT DENSITY; HETEROJUNCTIONS; HIGH POWER LASERS; INJECTION LASERS; LIGHT ABSORPTION; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CATASTROPHICAL OPTICAL DEGRADATION; CONFINEMENT FACTOR;

QUANTUM WELL LASERS;

EID: 0031109219     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605652     Document Type: Article

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