High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size

IEEE Photonics Technology Letters

Volumn 8, Issue 10, 1996, Pages 1291-1293

  Emanuel, M A ^a   Carlson, N W ^b,c   Skidmore, J A ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b SDL INC   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FABRICATION; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PERFORMANCE; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CATASTROPHIC OPTICAL DAMAGE; GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE; LARGE SPOT; TRANSVERSE SPOT SIZE;

SEMICONDUCTOR LASERS;

EID: 0030270840     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.536631     Document Type: Article

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