Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 174-178

  He, J H ^a   Wu, W W ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Germanosilicide; Implantation; Ni silicide; Preamorphization; SiGe

Indexed keywords

AGGLOMERATION; FLUORINE; MORPHOLOGY; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANOSILICIDE; IMPLANTATION; NI SILICIDE; PREAMORPHIZATION; SIGE;

NICKEL COMPOUNDS;

EID: 23444458115     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.096     Document Type: Conference Paper

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