Realization of ultra shallow junctions by PIII: Application to solar cells

Surface and Coatings Technology

Volumn 186, Issue 1-2 SPEC. ISS., 2004, Pages 93-98

  Torregrosa, Frank ^a   Laviron, Cyrille ^b   Faik, Hasnaa ^a   Barakel, Damien ^c   Milesi, Frédéric ^a   Beccaccia, Sébastien ^c  

^a Ion Beam Services   (France)

^b CEA LETI   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Plasma immersion ion implantation; Ultra shallow junction

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONTAMINATION; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SOLAR CELLS;

INTERNAL QUALITY FACTORS (IQF); PLASMA IMMERSION ION IMPLANTATION (PIII); SUBMICROMETERS; ULTRA SHALLOW JUNCTIONS (USJ);

PLASMAS;

SOLAR POWER;

EID: 17644411081     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.04.046     Document Type: Article

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