Nanocrystal formation in thermally oxidized and annealed a-Si:H films and SiO xN y films (x=0.17; y=0.07)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5224, Issue , 2003, Pages 8-16

  Kohli, Sandeep ^a   Theil, Jeremy A ^b   Snyder, Rick D ^b   Rithner, Christopher D ^a   Dorhout, Peter K ^a  

^a Department of Ecosystem Science and Sustainability   (United States)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

Annealing; Nanocrystals; Oxidation; Silicon rich silicon oxide; Thin film a Si:H

Indexed keywords

COLUMNAR GROWTH; SILICON-RICH SILICON OXIDES; THERMALLY OXIDIZED FILMS; THIN FILM A-SI:H;

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH; ELECTROLUMINESCENCE; OXIDATION; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 2342620220     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.501706     Document Type: Conference Paper

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