Luminescent Ge nanocrystallites embedded in a-SiO2 films

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3175, Issue , 1998, Pages 37-41

  He, Zhenhong ^a   Chen, Kunji ^a   Xu, Jun ^a   Feng, Duan ^a   Han, Hexiang ^b   Wang, Zhaoping ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Ion implantation; Mutilayer film; Nanocrystalline Ge; Photoluminescence

Indexed keywords

CHEMICAL OXYGEN DEMAND; FILM PREPARATION; ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; LUMINESCENCE; METALLIC COMPOUNDS; MULTILAYER FILMS; NANOCRYSTALLINE ALLOYS; OXIDATION; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

ALLOY FILMS; AVERAGE SIZES; GE CONTENTS; GE NANOCRYSTALLITES; H FILMS; LUMINESCENT NANOCRYSTALS; MUTILAYER FILM; NANOCRYSTALLINE GE; OXIDIZED SAMPLES; PEAK ENERGIES; PERPENDICULAR DIRECTIONS; SELECTIVE OXIDATIONS; THERMAL OXIDATIONS;

GERMANIUM;

EID: 2342659622     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.300692     Document Type: Conference Paper

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