Influence of vacuum rapid thermal annealing on the properties of μPCVD SiO2 and SiO2·P2O5 films

Vacuum

Volumn 58, Issue 2, 2000, Pages 485-489

  Dimitrov, D B ^a   Beshkova, M ^b   Dafinova, R ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF ELECTRONICS   (Bulgaria)

^c UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSIFICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS; RAPID THERMAL ANNEALING; SILICA; SUBSTRATES; THERMAL EFFECTS;

MICRO PRESSURE CHEMICAL VAPOR DEPOSITION TECHNIQUES;

SEMICONDUCTING FILMS;

EID: 0034245756     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00209-8     Document Type: Article

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