Preparation of large area freestanding GaN by laser lift-off technology

Materials Letters

Volumn 56, Issue 1-2, 2002, Pages 43-46

  Xu, J ^a,b   Zhang, R ^a   Wang, Y P ^a   Xiu, X Q ^a   Shen, B ^a   Gu, S L ^a   Shi, Y ^a   Liu, Z G ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Atomic force microscopy; Freestanding; GaN films; Lift off; Photoluminescence; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACKS; FILM GROWTH; LIGHT ABSORPTION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LASER LIFT-OFF TECHNOLOGY;

GALLIUM NITRIDE;

EID: 0036743758     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)00414-7     Document Type: Article

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