The efficiency of damage production in silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 68-73

  Weber, W J ^a   Gao, F ^a   Devanathan, R ^a   Jiang, W ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Computer simulations; Defects; Irradiation effects; Silicon carbide

Indexed keywords

ACTIVATION ENERGY; BOUNDARY CONDITIONS; CARBON; COMPUTATIONAL COMPLEXITY; COMPUTER SIMULATION; DEFECTS; IRRADIATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; OPTIMIZATION;

COLLISION PROCESSES; DOPANT CONCENTRATIONS; IRRADIATION EFFECTS; NEUTRON-CAPTURE CROSS-SECTIONS;

SILICON CARBIDE;

EID: 2342597138     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.006     Document Type: Conference Paper

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