Atomic-level study of ion-induced nanoscale disordered domains in silicon carbide

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 913-915

  Gao, F ^a   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GOLD; ION BEAMS; IONS; OPTOELECTRONIC DEVICES;

MONOVACANCIES;

SILICON CARBIDE;

EID: 0037428684     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542686     Document Type: Article

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