InGaP HBT technology for RF and microwave instrumentation

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1437-1444

  Low, Tom ^a   Shirley, Tim ^a   Hutchinson, Craig ^a   Essilfie, Gilbert ^a   Whiteley, Wes ^a   Yeats, Bob ^a   D'Avanzo, Don ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BANDWIDTH; FEEDBACK AMPLIFIERS; INTEGRATED CIRCUIT MANUFACTURE; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; NATURAL FREQUENCIES; RADIO WAVES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

CRITICAL DIMENSION; DARLINGTON FEEDBACK AMPLIFIER; DYNAMIC RANGE; INDIUM GALLIUM PHOSPHIDE; MEDIAN TIME TO FAILURE; MICROWAVE INSTRUMENTATION; PHASE NOISE; SILICON CHLORANE; STEPPER ALIGNED LITHOGRAPHY; TIME DOMAIN JITTER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033173912     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00086-6     Document Type: Article

References (9)

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