Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process

Journal of Electronic Materials

Volumn 26, Issue 11, 1997, Pages 1320-1325

  Eddy Jr , C R ^a   Glembocki, O J ^a   Leonhardt, D ^a   Shamamian, V A ^a   Holm, R T ^a   Thoms, B D ^b   Butler, J E ^a   Pang, S W ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GEORGIA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Fermi level; Ion driven surface chemistry; Mass spectromety surface passivation

Indexed keywords

EID: 0001222518     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0078-8     Document Type: Article

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