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Volumn 77, Issue 20, 2000, Pages 3227-3229

Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates

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EID: 0000348893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1326045     Document Type: Article
Times cited : (67)

References (15)
  • 13
    • 85001690528 scopus 로고    scopus 로고
    • note
    • We would like to mention that we also observe a persistent photoeffect in our samples. This allows one to increase the electron density in a certain range by illumination with a standard red LED.
  • 14
    • 85001826749 scopus 로고    scopus 로고
    • For the calculations we have used the program "I DPoisson" by G. Snider which is provided as freeware via the Internet;
    • For the calculations we have used the program "I DPoisson" by G. Snider which is provided as freeware via the Internet; see http://www.notre-dame.edu/∼gsnider


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.