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Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 735-738

Anomalous downward band bending induced by selenium passivation of MBE-grown InAs(001) surfaces

(2) Watanabe, Yoshio a Maeda, Fumihiko a

a NTT Basic Research Laboratories (Japan)

Author keywords

InAs(001); Photoelectron spectroscopy; Se passivation; Surface fermi level; Synchrotron radiation

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; FERMI LEVEL; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SELENIUM; SURFACE STRUCTURE; SYNCHROTRON RADIATION;

ANOMALOUS DOWNWARD BAND BENDING; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY (SRPES);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031548273 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80174-2 Document Type: Article

Times cited : (24)

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