Strain relaxation in high-mobility InAs inserted-channel heterostructures with metamorphic buffer

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1204-1207

  Mendach, S ^a   Hu, C M ^a   Heyn, Ch ^a   Schnull S ^a   Oepen, H P ^a   Anton, R ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Electron mobility; InAs HEMT; Superlattice; TEM

Indexed keywords

DISLOCATIONS (CRYSTALS); HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 0036492677     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00336-3     Document Type: Conference Paper

References (15)