Thermal oxidation of strained Si/SiGe: Impact of surface morphology and effect on MOS devices

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 78-84

  Olsen, S H ^a   O'Neill, A G ^a   Norris, D J ^b   Cullis, A G ^b   Bull, S J ^a   Chattopadhyay, S ^a   Kwa, K S K ^a   Driscoll, L S ^a   Waite, A M ^c   Tang, Y T ^c   Evans, A G R ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

MOSFET; Oxidation; SiGe; Strained Si; Surface roughness; Virtual substrate

Indexed keywords

CARRIER MOBILITY; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; REACTION KINETICS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMOOXIDATION;

SIGE; STRAINED SI; SURFACE VICINALITY; VIRTUAL SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2342507712     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.051     Document Type: Conference Paper

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