-
1
-
-
0001725324
-
Requirements on resist layer in deep-etch synchrotron radiation lithography
-
Mohr J; Ehrfeld W; Münchmeyer D: (1988) Requirements on resist layer in deep-etch synchrotron radiation lithography. J Vac Sci Technol B6: 2264-2267
-
(1988)
J Vac Sci Technol
, vol.B6
, pp. 2264-2267
-
-
Mohr, J.1
Ehrfeld, W.2
Münchmeyer, D.3
-
6
-
-
0029251843
-
MEMS-Fabrication by Lithography and Reactive Ion Etching (LIRIE)
-
Rangelow IW; Hudek P: (1995) MEMS-Fabrication by Lithography and Reactive Ion Etching (LIRIE). Microelectr Eng 27: 471-474
-
(1995)
Microelectr Eng
, vol.27
, pp. 471-474
-
-
Rangelow, I.W.1
Hudek, P.2
-
7
-
-
0027224391
-
Microgrig fabrication of fluorinated polyimide by using magnetically controlled reactive ion etching
-
IEEE Cat. Nr. 93CH3265-6
-
Furuya A; Shimokawa F; Matsuura T; Sawada R: (1993) Microgrig fabrication of fluorinated polyimide by using magnetically controlled reactive ion etching. Proc. IEEE MEMS'93, IEEE Cat. Nr. 93CH3265-6, pp. 59-64
-
(1993)
Proc. IEEE MEMS'93
, pp. 59-64
-
-
Furuya, A.1
Shimokawa, F.2
Matsuura, T.3
Sawada, R.4
-
10
-
-
0001197855
-
Microscopic uniformity in plasma etching
-
Gottscho RA; Jurgensen CW: (1992) Microscopic uniformity in plasma etching. J Vac Sci Technol B10: 2133-2147
-
(1992)
J Vac Sci Technol
, vol.B10
, pp. 2133-2147
-
-
Gottscho, R.A.1
Jurgensen, C.W.2
-
11
-
-
36549098129
-
A two-dimensional computer simulation for dry etching using Monte Carlo techniques
-
Ulacia JL; McVitte JP: (1989) A two-dimensional computer simulation for dry etching using Monte Carlo techniques. J Appl Phys 65: 1484-1491
-
(1989)
J Appl Phys
, vol.65
, pp. 1484-1491
-
-
Ulacia, J.L.1
McVitte, J.P.2
-
12
-
-
36549100677
-
Conductance considerations in the reactive ion etching of high aspect ratio features
-
Coburn JW; Winters HF: (1989) Conductance considerations in the reactive ion etching of high aspect ratio features. Appl Phys Lett 55: 2730-2732
-
(1989)
Appl Phys Lett
, vol.55
, pp. 2730-2732
-
-
Coburn, J.W.1
Winters, H.F.2
-
13
-
-
0000302625
-
The influence of substrate topography on ion bombardment in plasma etching
-
Ingram SG: (1990) The influence of substrate topography on ion bombardment in plasma etching. J Appl Phys 68: 500-504
-
(1990)
J Appl Phys
, vol.68
, pp. 500-504
-
-
Ingram, S.G.1
-
14
-
-
0020112586
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Computer simulation of line edge profiles undergoing ion bombardment
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Rangelow IW: (1983) Computer simulation of line edge profiles undergoing ion bombardment. J Vac Sci and Technology, Vol. A1 410-414
-
(1983)
J Vac Sci and Technology
, vol.A1
, pp. 410-414
-
-
Rangelow, I.W.1
-
15
-
-
0040114175
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4/Si
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Loughborough, UK, 22-27 August, 1993
-
4/Si. Proceedings of the 11th International Symposium on Plasma Chemistry, Loughborough, UK, 22-27 August, 1993, pp. 909-914
-
(1993)
Proceedings of the 11th International Symposium on Plasma Chemistry
, pp. 909-914
-
-
Wechsler, K.1
Rangelow, I.W.2
Borkowicz, Z.3
Durst, F.4
Kadinski, L.5
Schäfer, M.6
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16
-
-
0042394838
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Inhibitor films as microetching tools in pattern transfer technology
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Rangelow IW; Kassing R: (1988) Inhibitor films as microetching tools in pattern transfer technology. Plasma Surface Engineering 1: 473-478
-
(1988)
Plasma Surface Engineering
, vol.1
, pp. 473-478
-
-
Rangelow, I.W.1
Kassing, R.2
-
17
-
-
0022952881
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Secondary effects of single crystalline silicon deep-trench-etching in a chlorine-containing plasma for 3-dimensional capacitor cells
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Rangelow IW; Thoren P; Maßeli K; Kassing R; Engelhardt M; Schwarzl S: (1986) Secondary effects of single crystalline silicon deep-trench-etching in a chlorine-containing plasma for 3-dimensional capacitor cells. Microelectr Eng 5: 387-394
-
(1986)
Microelectr Eng
, vol.5
, pp. 387-394
-
-
Rangelow, I.W.1
Thoren, P.2
Maßeli, K.3
Kassing, R.4
Engelhardt, M.5
Schwarzl, S.6
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18
-
-
0023545441
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Fabrication of 15 um thick Si-hole masks for demagnifying projection systems for ion- or electron-beams
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Olschimke J; Rangelow IW; Tschudi T; Kassing R: (1987) Fabrication of 15 um thick Si-hole masks for demagnifying projection systems for ion- or electron-beams. Microelectr Eng 5: 547-552
-
(1987)
Microelectr Eng
, vol.5
, pp. 547-552
-
-
Olschimke, J.1
Rangelow, I.W.2
Tschudi, T.3
Kassing, R.4
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19
-
-
0022185414
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Computer simulation of pattern profiles through physical etching with shadow, trenching, and redeposition
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Rangelow IW; Thoren P; Kassing R: (1985) Computer simulation of pattern profiles through physical etching with shadow, trenching, and redeposition. Microelectr Eng 3: 631-638
-
(1985)
Microelectr Eng
, vol.3
, pp. 631-638
-
-
Rangelow, I.W.1
Thoren, P.2
Kassing, R.3
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20
-
-
2842582905
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Simulation of RIE-processes considering sheath dynamics
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FRG, Sept. 10-14, 1990
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Fichelscher A; Rangelow IW; Kassing R: (1990) Simulation of RIE-processes considering sheath dynamics. Proc. of Second International Conf. on Plasma Surface Engineering in Garmisch-Partenkirchen, FRG, Sept. 10-14, 1990, published in: Materials Science and Engineering, A 139: 412-417
-
(1990)
Proc. of Second International Conf. on Plasma Surface Engineering in Garmisch-Partenkirchen
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-
Fichelscher, A.1
Rangelow, I.W.2
Kassing, R.3
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21
-
-
2842609591
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-
published
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Fichelscher A; Rangelow IW; Kassing R: (1990) Simulation of RIE-processes considering sheath dynamics. Proc. of Second International Conf. on Plasma Surface Engineering in Garmisch-Partenkirchen, FRG, Sept. 10-14, 1990, published in: Materials Science and Engineering, A 139: 412-417
-
Materials Science and Engineering, A
, vol.139
, pp. 412-417
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-
-
22
-
-
0001041427
-
Reactive ion etching for MEMS fabrication
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Rangelow IW; Löschner H: (1995) Reactive ion etching for MEMS fabrication. J Vac Sci Technol 2394-2399
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(1995)
J Vac Sci Technol
, pp. 2394-2399
-
-
Rangelow, I.W.1
Löschner, H.2
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23
-
-
0029606156
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Bulk micromachining of Si by lithography and reactive ion etching (LIRIE)
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Rangelow IW; Hudek P; Shi F: (1995) Bulk micromachining of Si by lithography and reactive ion etching (LIRIE). Vacuum 46: 1361-1369
-
(1995)
Vacuum
, vol.46
, pp. 1361-1369
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-
Rangelow, I.W.1
Hudek, P.2
Shi, F.3
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24
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-
2842528486
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Stencil maasken für die ionen projektions lithographie und für die maskierte ionenstrahl lithographie
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München
-
Rangelow IW; Hudek P; Shi F; Kostio I; Kassing R; Löschner; Caahipka A; Hammel E; Stengl G; Vonach H: (1995) Stencil maasken für die ionen projektions lithographie und für die maskierte ionenstrahl lithographie. VDI-Bericht von VDI Fachtagung "Maskentechnik für Mikroelektronik-/Mikrotechnik-Bausteine" 25/26 Oct. 1995, München, pp. 13-118
-
(1995)
VDI-Bericht von VDI Fachtagung "Maskentechnik für Mikroelektronik-/Mikrotechnik-Bausteine" 25/26 Oct. 1995
, pp. 13-118
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-
Rangelow, I.W.1
Hudek, P.2
Shi, F.3
Kostio, I.4
Kassing, R.5
Löschner6
Caahipka, A.7
Hammel, E.8
Stengl, G.9
Vonach, H.10
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25
-
-
0029771235
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Evaluation of chemically amplified deep UV resist for micromachining using E-beam lithography and dry etching
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Hudek P; Rangelow IW; Kostic I; Münzel N; Daraktchiev I: (1996) Evaluation of chemically amplified deep UV resist for micromachining using E-beam lithography and dry etching. Microelectronic Eng 30: 309-312
-
(1996)
Microelectronic Eng
, vol.30
, pp. 309-312
-
-
Hudek, P.1
Rangelow, I.W.2
Kostic, I.3
Münzel, N.4
Daraktchiev, I.5
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26
-
-
0029753145
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Silicon stencil masks for masked ion beam lithography proximity printing
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Rangelow IW; Shi F; Hudek P; Kostic I; Hammel E; Löschner H; Stengl G; Traher C: (1996) Silicon stencil masks for masked ion beam lithography proximity printing. Microelectronic Eng 30: 257-260
-
(1996)
Microelectronic Eng
, vol.30
, pp. 257-260
-
-
Rangelow, I.W.1
Shi, F.2
Hudek, P.3
Kostic, I.4
Hammel, E.5
Löschner, H.6
Stengl, G.7
Traher, C.8
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