Scanning tunneling microscopy study of GaAs(1 0 0) surface prepared by HCl-isopropanol treatment

Applied Surface Science

Volumn 206, Issue 1-4, 2003, Pages 2-7

  Laukkanen, P ^a   Kuzmin, M ^a,b   Perala R E ^a   Vaara, R L ^a   Vayrynen I J ^a  

^a UNIVERSITY OF TURKU   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium arsenide; HCl isopropanol treatment; Scanning tunneling microscopy

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; HYDROCHLORIC ACID; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

LOCAL ATOMIC STRUCTURES;

GALLIUM COMPOUNDS;

EID: 0037441182     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01226-6     Document Type: Article

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