Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2001, Pages 249-253

  Lau, M M ^a   Hsu, C T ^a   Yeow, Y T ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC SPACE CHARGE; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE; STRESSES;

DRAIN TO SUBSTRATE GATED DIODE; ELECTRICAL STRESSING; INTERFACES DAMAGES; SMALL SIGNAL ADMITTANCE;

MOSFET DEVICES;

EID: 0034826201     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Hot-carrier degradation of n-channel MOSFET's characterized by a gated-diode measurement technique
2. Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current
3. Hot-carrier degradation monitoring LDD n-MOSFET's using drain gated-diode measurements
4. Spatial distribution of interface traps after hot-carrier stress from forward GIDL measurements
5. The gated-diode configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation
6. Comparison of gated-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFET's
7. Device electronics for integrated circuits
8. Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's
9. A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions
10. A new approach for characterizing structure-dependent hot-carrier effects in drain-engineering MOSFET's
11. 2-D device simulation program